A Large-signal Compatible Dual-gate Mesfet Dc Model
نویسنده
چکیده
This paper presents a simple yet powerful dualgate MESFET (DGFET) DC model. It is based on a single 3-dimensional power series expression and provides a high degree of freedom making it generally applicable. Further, it enables analytical parameter extraction. The model is capable of tracking I/V measurements and derivatives in a large bias range and, hence, is large-signal compatible. Results show that with an order of 8, the model accurately tracks I/V characteristics as well as 1st and 2nd order derivatives.
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